- 专利标题： Memristor memory with volatile and non-volatile states
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申请号： US15112767申请日： 2014-01-30
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公开(公告)号： US10056140B2公开(公告)日： 2018-08-21
- 发明人: Yoocharn Jeon , Martin Foltin
- 申请人： Hewlett Packard Enterprise Development LP
- 申请人地址： US TX Houston
- 专利权人： Hewlett Packard Enterprise Development LP
- 当前专利权人： Hewlett Packard Enterprise Development LP
- 当前专利权人地址： US TX Houston
- 代理机构： Trop, Pruner & Hu, P.C.
- 国际申请： PCT/US2014/013885 WO 20140130
- 国际公布： WO2015/116107 WO 20150806
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C14/00
摘要：
In an example, a method of controlling a memristor memory includes operating the memristor memory in a volatile mode, wherein switching a state of a memristor cell is with a low writing load. The method also includes operating the same memristor memory in a non-volatile mode, wherein switching a state of the memristor cell is with a high writing load.
公开/授权文献
- US20160343435A1 MEMRISTOR MEMORY WITH VOLATILE AND NON-VOLATILE STATES 公开/授权日：2016-11-24
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