In a method of reading data in a nonvolatile memory device including a plurality of memory cells arranged at intersections of a plurality of word-lines and a plurality of bit-lines, a read request on a first word-line of the plurality of word-lines is received, a read operation is performed on a second word-line adjacent to the first word-line and a read operation is performed on the first word-line based on data read from memory cells of the second word-line. The read operation on the first word-line is performed by adjusting a level of recover read voltage applied to the first word-line during the read operation of the first word-line based on at least one of a program state of the data read from memory cells of the second word-line and an operating parameter of the nonvolatile memory device.