- 专利标题： Self-aligned pattern formation for a semiconductor device
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申请号： US15198827申请日： 2016-06-30
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公开(公告)号： US10056290B2公开(公告)日： 2018-08-21
- 发明人: Sean D. Burns , Lawrence A. Clevenger , Nelson M. Felix , Sivananda K. Kanakasabapathy , Christopher J. Penny , Nicole Saulnier
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L23/48 ; H01L23/52 ; H01L21/768 ; H01L23/528 ; H01L23/522
摘要：
A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.
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