- 专利标题: Semiconductor device and method for manufacturing the same
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申请号: US15302632申请日: 2014-04-24
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公开(公告)号: US10056323B2公开(公告)日: 2018-08-21
- 发明人: Kazuyuki Nakagawa , Shinji Baba , Takeumi Kato
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 国际申请: PCT/JP2014/061625 WO 20140424
- 国际公布: WO2015/162768 WO 20151029
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L23/498 ; H01L25/00 ; H05K3/46 ; H01L21/56 ; H01L21/66 ; H01L23/31 ; H01L23/367 ; H01L23/66 ; H01L23/00
摘要:
A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad. The first conductor pattern includes a first opening in a region overlapping with each of the first terminal pad and the second terminal pad in the second wiring layer.
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