Invention Grant
- Patent Title: Ruthenium metal feature fill for interconnects
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Application No.: US15651979Application Date: 2017-07-17
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Publication No.: US10056328B2Publication Date: 2018-08-21
- Inventor: Kai-Hung Yu , Gerrit J. Leusink , Cory Wajda , Tadahiro Ishizaka , Takahiro Hakamata
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/285
Abstract:
A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.
Public/Granted literature
- US20170317022A1 RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS Public/Granted day:2017-11-02
Information query
IPC分类:
