- 专利标题： Method for fabricating semiconductor device
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申请号： US15465622申请日： 2017-03-22
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公开(公告)号： US10056388B2公开(公告)日： 2018-08-21
- 发明人: Ger-Pin Lin , Yung-Ming Wang , Tien-Chen Chan , Shu-Yen Chan
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu CN Quanzhou, Fujian province
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu CN Quanzhou, Fujian province
- 代理商 Winston Hsu
- 优先权： CN201611258719 20161230
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L27/108 ; H01L21/265 ; H01L29/10 ; H01L29/49 ; H01L21/762 ; H01L29/66 ; H01L29/78
摘要：
A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region defined thereon; forming a trench in the substrate; performing a first ion implantation process to form a first doped region having a first conductive type in the substrate adjacent to the trench; forming a gate electrode in the trench; and performing a second ion implantation process to form a second doped region having a second conductive type in the substrate above the gate electrode.
公开/授权文献
- US20180190660A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2018-07-05
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