发明授权
- 专利标题： Front side illuminated image sensor device structure and method for forming the same
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申请号： US15609384申请日： 2017-05-31
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公开(公告)号： US10056427B1公开(公告)日： 2018-08-21
- 发明人: Ji-Heng Jiang , Ming-Chi Wu , Chi-Yuan Wen , Chien-Nan Tu , Yu-Lung Yeh
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
An FSI image sensor device structure is provided. The FSI image sensor device structure includes a substrate and a barrier structure formed in the substrate. The barrier structure includes a plurality of protrusion portions and a plurality of pillar portions. Each of the protrusion portions has a first height, and each of the pillar portions has a second height that is greater than the first height. The FSI image sensor device structure includes a pixel region formed over the protrusion portions and a storage region formed over the protrusion portions, wherein the pillar portions surround the pixel region.
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