- 专利标题： Interlayer dielectric for non-planar transistors
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申请号： US15400958申请日： 2017-01-06
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公开(公告)号： US10056488B2公开(公告)日： 2018-08-21
- 发明人: Sameer Pradhan , Jeanne Luce
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Green, Howard & Mughal LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
The present description relates the formation of a first level interlayer dielectric material layer within a non-planar transistor, which may be formed by a spin-on coating technique followed by oxidation and annealing. The first level interlayer dielectric material layer may be substantially void free and may exert a tensile strain on the source/drain regions of the non-planar transistor.
公开/授权文献
- US20170125596A1 INTERLAYER DIELECTRIC FOR NON-PLANAR TRANSISTORS 公开/授权日：2017-05-04
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