Invention Grant
- Patent Title: Processing method for leakage power and electronic device supporting the same
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Application No.: US15412764Application Date: 2017-01-23
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Publication No.: US10056945B2Publication Date: 2018-08-21
- Inventor: Dong Zo Kim , Kwang Seob Kim , Se Ho Park , Yu Su Kim , Han Seok Park , Keum Su Song , Ju Hyang Lee , Min Cheol Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Jefferson IP Law, LLP
- Priority: KR10-2016-0036881 20160328
- Main IPC: H04B5/00
- IPC: H04B5/00 ; H04M1/00 ; H01Q1/24 ; H02J50/10 ; H02J50/12 ; H02J50/80

Abstract:
A leakage power processing method of an electronic device including a first conductive pattern that sends and receives a communication signal associated with a communication function, a second conductive pattern that is arranged adjacent to the first conductive pattern and sends and receives a power signal used for charging, and a communication hardware interface electrically connected with the first conductive pattern is provided. The leakage power processing method includes determining, by a processor of an electronic device, whether a specific power signal is induced through the second conductive pattern and forming, by the processor of the electronic device, a closed loop including the first conductive pattern if the specific power signal of a specific magnitude or greater is induced.
Public/Granted literature
- US20170279495A1 PROCESSING METHOD FOR LEAKAGE POWER AND ELECTRONIC DEVICE SUPPORTING THE SAME Public/Granted day:2017-09-28
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