Invention Grant
- Patent Title: TFT array substrate and manufacturing method thereof
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Application No.: US15327967Application Date: 2016-10-10
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Publication No.: US10062715B2Publication Date: 2018-08-28
- Inventor: Lulu Xie , Bin Xiong , Yun Han
- Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Wuhan, Hubei
- Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Wuhan, Hubei
- Agent Andrew C. Cheng
- Priority: CN201610807781 20160907
- International Application: PCT/CN2016/101611 WO 20161010
- International Announcement: WO2018/045613 WO 20180315
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L27/12 ; H05K1/18 ; H01L29/66 ; H01L29/49

Abstract:
A TFT array substrate and its manufacturing method are disclosed. The TFT array substrate includes a substrate having a display area and a non-display area, and at least a Schottky diode on the non-display area. The Schottky diode includes an anode layer and a cathode layer on the substrate, a gate insulation layer on the substrate covering the anode and cathode layers, a first gate on the gate insulation layer covering portions of the anode and cathode layers, an inter-layer insulation layer on the gate insulation layer covering the first gate and having a number of vias exposing the anode and cathode layers, respectively, and a first electrode and a second electrode in the vias on the inter-layer insulation layer connecting the anode and cathode layers, respectively. The present disclosure achieves simplified manufacturing process and reduced cost by forming the Schottky diode simultaneously when the TFT is formed.
Public/Granted literature
- US20180211981A1 TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-07-26
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