Invention Grant
- Patent Title: Silicon carbide semiconductor device and method for manufacturing same
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Application No.: US14778058Application Date: 2013-03-29
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Publication No.: US10062759B2Publication Date: 2018-08-28
- Inventor: Digh Hisamoto , Keisuke Kobayashi , Naoki Tega , Toshiyuki Ohno , Hirotaka Hamamura , Mieko Matsumura
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- International Application: PCT/JP2013/059449 WO 20130329
- International Announcement: WO2014/155651 WO 20141002
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L21/04 ; H01L29/66 ; H01L29/872 ; H01L29/06 ; H01L21/02 ; H01L29/10 ; H01L29/78
Abstract:
A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.
Public/Granted literature
- US10032871B2 Silicon carbide semiconductor device and method for manufacturing same Public/Granted day:2018-07-24
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