Invention Grant
- Patent Title: Multiband double junction photodiode and related manufacturing process
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Application No.: US15479034Application Date: 2017-04-04
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Publication No.: US10062798B2Publication Date: 2018-08-28
- Inventor: Massimo Cataldo Mazzillo , Antonella Sciuto , Dario Sutera
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Main IPC: H01L31/101
- IPC: H01L31/101 ; H01L31/108 ; H01L31/0224 ; H01L31/028 ; H01L31/0352 ; H01L31/11 ; H01L31/18

Abstract:
A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.
Public/Granted literature
- US20170207360A1 MULTIBAND DOUBLE JUNCTION PHOTODIODE AND RELATED MANUFACTURING PROCESS Public/Granted day:2017-07-20
Information query
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