- 专利标题: Semiconductor device
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申请号: US15706438申请日: 2017-09-15
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公开(公告)号: US10063205B2公开(公告)日: 2018-08-28
- 发明人: Masakazu Mizokami
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn I.P Law Group, PLLC.
- 优先权: JP2016-205906 20161020
- 主分类号: H04K1/02
- IPC分类号: H04K1/02 ; H04L25/03 ; H04L25/49 ; H03G3/30 ; G01R25/04 ; H03F1/02 ; H03F3/217 ; H03F3/24
摘要:
In a related-art semiconductor device, there is a problem that a second-order harmonic distortion originating in a power amplifier driven by a rectangular-wave signal cannot be effectively suppressed. According to an embodiment, a semiconductor device generates a transmission signal RF_OUT for driving an antenna by receiving first transmission pulses INd_P and second transmission pulses INd_N having a duty ratio lower than 50%, adjusting a phase difference between the first and second transmission pulses INd_P and INd_N to a predefined phase difference, and supplying the phase-difference-adjusted first and second transmission pulses INd_P and INd_N to a power amplifier 54.
公开/授权文献
- US20180115291A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-04-26
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