Invention Grant
- Patent Title: Ground system for high voltage semiconductor valve
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Application No.: US15034268Application Date: 2013-11-05
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Publication No.: US10064260B2Publication Date: 2018-08-28
- Inventor: Björn Sandin , Christer Sjöberg , Erik Doré , Johannes Gran Hirvioja
- Applicant: ABB TECHNOLOGY LTD
- Applicant Address: CH Baden
- Assignee: ABB SCHWEIZ AG
- Current Assignee: ABB SCHWEIZ AG
- Current Assignee Address: CH Baden
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- International Application: PCT/EP2013/073017 WO 20131105
- International Announcement: WO2015/067296 WO 20150514
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H05F3/02 ; H01L23/00 ; H02H9/02

Abstract:
A high voltage valve arrangement includes a high voltage valve unit; an external electric shield structure arranged at least partially around the high voltage modular valve unit and a grounding system. The grounding system includes a grounding system configured to be remotely extended from a retracted position to an extended position, whereby the extendable grounding device establishes electric connection with the external shield structure when it is extended from the retracted position.
Public/Granted literature
- US20160278192A1 GROUND SYSTEM FOR HIGH VOLTAGE SEMICONDUCTOR VALVE Public/Granted day:2016-09-22
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