Invention Grant
- Patent Title: Silicon-based MEMS devices including wells embedded with high density metal
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Application No.: US14695421Application Date: 2015-04-24
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Publication No.: US10073113B2Publication Date: 2018-09-11
- Inventor: Xin Zhang , Michael Judy
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: G01P15/08
- IPC: G01P15/08 ; B81C1/00 ; H01L21/48 ; G01C19/5769
Abstract:
In one aspect, the disclosure is directed to a MEMS device. The MEMS device includes a silicon-based movable MEMS sensor element. The MEMS device also includes a plurality of wells formed into at least one surface of the movable MEMS sensor element. Each well is filled with at least one metal so as to increase the effective mass of the movable MEMS sensor element. The metal may be tungsten or tantalum, or an alloy with tungsten or tantalum.
Public/Granted literature
- US20160178656A1 Silicon-Based MEMS Devices Including Wells Embedded with High Density Metal Public/Granted day:2016-06-23
Information query
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