Invention Grant
- Patent Title: Methods for crystallizing a substrate using a plurality of laser pulses and freeze periods
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Application No.: US15186499Application Date: 2016-06-19
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Publication No.: US10074538B2Publication Date: 2018-09-11
- Inventor: Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: C30B1/02
- IPC: C30B1/02 ; H01L21/02 ; H01L21/268
Abstract:
Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
Public/Granted literature
- US20160293414A1 CRYSTALLIZATION METHODS Public/Granted day:2016-10-06
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