A method for forming a plurality of semiconductor devices includes forming a plurality of trenches extending from a first lateral surface of a semiconductor wafer towards a second lateral surface of the semiconductor wafer. The method further includes filling a portion of the plurality of trenches with filler material. The method further includes thinning the semiconductor wafer from the second lateral surface of the semiconductor wafer to form a thinned semiconductor wafer. The method further includes forming a back side metallization layer structure on a plurality of semiconductor chip regions of the semiconductor wafer after thinning the semiconductor wafer. The method further includes removing a part of the filler material from the plurality of trenches after forming the back side metallization layer structure to obtain the plurality of semiconductor devices.