Invention Grant
- Patent Title: Negative differential resistance (NDR) device based on fast diffusive metal atoms
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Application No.: US15500084Application Date: 2014-12-19
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Publication No.: US10074695B2Publication Date: 2018-09-11
- Inventor: Jianhua Yang , Stanley Williams , Max Zhang , Zhiyong Li
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agent Fabian VanCott
- International Application: PCT/US2014/071345 WO 20141219
- International Announcement: WO2016/099525 WO 20160623
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/26
Abstract:
A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.
Public/Granted literature
- US20170243924A1 NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE BASED ON FAST DIFFUSIVE METAL ATOMS Public/Granted day:2017-08-24
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