Invention Grant
- Patent Title: Integrated circuit devices comprising memristors
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Application No.: US15637272Application Date: 2017-06-29
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Publication No.: US10076904B2Publication Date: 2018-09-18
- Inventor: Jianhua Yang , Ning Ge , Zhiyong Li
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: HP Inc. Patent Department
- Main IPC: B41J2/14
- IPC: B41J2/14 ; B41J2/16 ; B41J2/045

Abstract:
In some examples, an integrated circuit device includes a substrate, a memristor over the substrate and comprising a first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers, and a thermal resistor layer over the substrate.
Public/Granted literature
- US20170305153A1 INTEGRATED CIRCUIT DEVICES COMPRISING MEMRISTORS Public/Granted day:2017-10-26
Information query
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