Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15243746Application Date: 2016-08-22
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Publication No.: US10078182B2Publication Date: 2018-09-18
- Inventor: Shinichi Watanuki , Akira Mitsuiki , Atsuro Inada , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
- Applicant: Renesas Electronics Corporation , Photonics Electronics Technology Research Association
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION,PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION,PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- Priority: JP2015-174393 20150904
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/136 ; G02B6/122 ; G02F1/025

Abstract:
When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.
Public/Granted literature
- US20170068051A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-03-09
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