Invention Grant
- Patent Title: Implanted photoresist stripping process
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Application No.: US15441332Application Date: 2017-02-24
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Publication No.: US10078266B2Publication Date: 2018-09-18
- Inventor: Wei-Hua Liou , Chun-Yen Kang , Vijay M. Vaniapura , Hai-Au M. Phan-Vu , Shawming Ma
- Applicant: Mattson Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Mattson Technology, Inc.
- Current Assignee: Mattson Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Dority & Manning, P.A.
- Main IPC: G03F7/42
- IPC: G03F7/42 ; H01L21/66 ; H01L21/311

Abstract:
Processes for removing a photoresist from a substrate after, for instance, ion implantation are provided. In one example implementation, a process can include placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber. The process can include initiating a first strip process in the processing chamber. The process can include accessing an optical emission signal associated with a plasma during the first strip process. The process can include identifying an endpoint for the first strip process based at least in part on the optical emission signal. The process can include terminating the first strip process based at least in part on the endpoint. The process can include initiating a second strip process to remove the photoresist from the substrate.
Public/Granted literature
- US20170248849A1 Implanted Photoresist Stripping Process Public/Granted day:2017-08-31
Information query
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