Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method

Invention Grant

US10079145B2 Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method 有权

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Patent Title: Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method
Application No.: US15292328

Application Date: 2016-10-13
Publication No.: US10079145B2

Publication Date: 2018-09-18
Inventor: Boon Teik Chan , Arjun Singh
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Applicant Address: BE Leuven BE Leuven
Assignee: IMEC VZW,KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D
Current Assignee: IMEC VZW,KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D
Current Assignee Address: BE Leuven BE Leuven
Agency: McDonnell Boehnen Hulbert & Berghoff LLP
Priority: EP15199468 20151211
Main IPC: H01L21/47
IPC: H01L21/47 ; H01L21/027 ; H01L29/06 ; H01L21/308 ; H01L21/02

Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method

Abstract:

The present disclosure relates to a method for pattern formation on a substrate. An example embodiment includes a method for pattern formation. The method includes providing a photoresist layer on a composite substrate. The method also includes patterning the photoresist layer by lithography to define a plurality of parallel stripe photoresist structures. The method further includes providing a block copolymer on and along the composite substrate, in between the parallel stripe photoresist structures. The block copolymer includes a first component and a second component. The method additionally includes subjecting the block copolymer to predetermined conditions to cause phase separation of the first component and the second component. In addition, the method includes performing a sequential infiltration synthesis process. Still further, the method includes selectively removing the parallel stripe photoresist structures. Additionally, the method includes defining a core stripe structure. Even further, the method includes performing a self-aligned multiple patterning process.

Public/Granted literature

US20170170007A1 Method for Pattern Formation on a Substrate, Associated Semiconductor Devices, and Uses of the Method Public/Granted day:2017-06-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/47	.......有机层，例如光刻胶（H01L21/475，H01L21/4757优先）