- 专利标题： Semiconductor storage device
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申请号： US15434310申请日： 2017-02-16
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公开(公告)号： US10079153B2公开(公告)日： 2018-09-18
- 发明人: Akifumi Gawase , Yukiteru Matsui , Takahiko Kawasaki
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/265 ; H01L21/306 ; H01L21/311 ; H01L21/04 ; H01L21/266 ; H01L21/425 ; H01L21/426 ; H01L29/16
摘要：
In a substrate processing method according to the embodiment, a first material is implanted into a surface of a target film to modify the surface of the target film. The surface of the target film is dissolved to remove the surface of the target film by bringing a catalytic material close to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.
公开/授权文献
- US20170250081A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2017-08-31
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