A semiconductor memory device may include: a substrate having a cell area defined thereon, the cell area including a cell block area and an edge area; a plurality of bottom electrodes, on the substrate, which are in parallel with a top surface of the substrate and a first direction in parallel with a top surface of the substrate, and are arranged along a second direction intersecting the first direction; and a support structure pattern, in a flat plate shape, which connects the bottom electrodes to each other, supports the bottom electrodes onto the substrate, and includes a plurality of open areas, wherein a first profile, which is a horizontal cross-sectional profile in the edge area of the support structure pattern, has a wave shape.