- 专利标题： High electron mobility transistor with indium nitride layer
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申请号： US15173907申请日： 2016-06-06
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公开(公告)号： US10079296B2公开(公告)日： 2018-09-18
- 发明人: Chen-Hao Chiang , Po-Chun Liu , Chi-Ming Chen , Min-Chang Ching , Chung-Yi Yu , Chia-Shiung Tsai , Ru-Liang Lee
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/18 ; H01L31/18 ; H01L29/66 ; H01L29/20 ; H01L29/45 ; H01L23/31 ; H01L29/205 ; H01L33/00 ; H01L21/225 ; H01L21/324
摘要：
A semiconductor device includes an indium gallium nitride layer over an active layer. The semiconductor device further includes an annealed region beneath the indium gallium nitride layer, the annealed region comprising indium atoms driven from the indium gallium nitride layer into the active layer.
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