- 专利标题： Silicon germanium fin immune to epitaxy defect
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申请号： US15378290申请日： 2016-12-14
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公开(公告)号： US10079304B2公开(公告)日： 2018-09-18
- 发明人: Kangguo Cheng , Juntao Li , Xin Miao
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Fleit Gibbons Gutman Bongini Bianco PL
- 代理商 Thomas S. Grzesik
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/78 ; H01L29/66 ; H01L29/161
摘要：
A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting material. A gate is formed over and in contact with the at least one fin. A germanium comprising layer is formed over and in contact with the at least one fin. Germanium from the germanium comprising layer is diffused into the semiconducting material of the at least one fin.
公开/授权文献
- US20170186862A1 SILICON GERMANIUM FIN IMMUNE TO EPITAXY DEFECT 公开/授权日：2017-06-29
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