Invention Grant
- Patent Title: Wideband amplifier circuits and methods
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Application No.: US15242404Application Date: 2016-08-19
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Publication No.: US10079582B2Publication Date: 2018-09-18
- Inventor: Timothy Gathman
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Agent Alan M. Lenkin
- Main IPC: H03G3/30
- IPC: H03G3/30 ; H03F1/26 ; H03F3/195 ; H03F3/24 ; H03F3/45 ; H03F1/08 ; H03F1/42 ; H03F3/19 ; H03F3/72

Abstract:
An wideband amplifier circuit such as a transimpedance amplifier achieves improved amplifier and/or system performance, such as a reduced input impedance. The transimpedance amplifier may use a complementary common gate stage that receives an input signal and generates current to a current summing stage. In one instance, an input current is received by a complimentary common gate stage that includes a first common gate transistor and a second common gate transistor, each having different polarities, in which the first terminals of each of the transistors are configured to receive the input current. Each of the transistors generates an output current to a current summing stage that generates an output voltage at an output terminal. The output voltage may be based on the combined currents from the first common gate transistor and second common gate transistor.
Public/Granted literature
- US20170179910A1 WIDEBAND AMPLIFIER CIRCUITS AND METHODS Public/Granted day:2017-06-22
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