Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14891319Application Date: 2014-11-13
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Publication No.: US10083924B2Publication Date: 2018-09-25
- Inventor: Kazuyoshi Maekawa , Yuichi Kawano
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- International Application: PCT/JP2014/080072 WO 20141113
- International Announcement: WO2016/075791 WO 20160519
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/00 ; H01L21/3205 ; H01L23/522 ; H01L21/768
Abstract:
A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.
Public/Granted literature
- US20160379946A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-12-29
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