Invention Grant
- Patent Title: Decoupling capacitor
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Application No.: US15663644Application Date: 2017-07-28
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Publication No.: US10083955B2Publication Date: 2018-09-25
- Inventor: Chung-Hui Chen , Hao-Chieh Chan , Wei-Chih Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/528 ; H01L49/02 ; H01L27/02

Abstract:
A device includes a plurality of active areas, a plurality of gates, and a plurality of conductors. The active areas are elongated in a first direction. The gates are elongated in a second direction. The conductors are disposed between the active areas and elongated in the second direction. Each one of the conductors has an overlap with at least one corresponding gate of the gates to form at least one capacitor.
Public/Granted literature
- US20170345816A1 DECOUPLING CAPACITOR Public/Granted day:2017-11-30
Information query
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