Invention Grant
- Patent Title: Semiconductor device comprising a gate formed from a gate ring
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Application No.: US15657401Application Date: 2017-07-24
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Publication No.: US10084062B2Publication Date: 2018-09-25
- Inventor: Ning Ge , Leong Yap Chia , Pin Chin Lee , Jose Jehrome Rando
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: HP Inc. Patent Department
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/332
Abstract:
In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.
Public/Granted literature
- US20170323961A1 SEMICONDUCTOR DEVICE COMPRISING A GATE FORMED FROM A GATE RING Public/Granted day:2017-11-09
Information query
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