- Patent Title: Doping engineered hole transport layer for perovskite-based device
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Application No.: US15523500Application Date: 2015-11-05
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Publication No.: US10084145B2Publication Date: 2018-09-25
- Inventor: Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
- Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Applicant Address: JP Okinawa
- Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee Address: JP Okinawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- International Application: PCT/JP2015/005541 WO 20151105
- International Announcement: WO2016/072092 WO 20160512
- Main IPC: H01L51/42
- IPC: H01L51/42 ; H01L51/00

Abstract:
An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
Public/Granted literature
- US10115918B2 Doping engineered hole transport layer for perovskite-based device Public/Granted day:2018-10-30
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