Invention Grant
- Patent Title: Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
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Application No.: US15820047Application Date: 2017-11-21
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Publication No.: US10090644B2Publication Date: 2018-10-02
- Inventor: James W. Raring , Mathew Schmidt , Christiane Poblenz
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/343 ; H01S5/20 ; H01S5/227 ; B82Y20/00 ; H01S5/00 ; H01S5/02 ; H01S5/028 ; H01S5/32 ; H01S5/40

Abstract:
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
Public/Granted literature
- US20180097337A1 LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES Public/Granted day:2018-04-05
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