Invention Grant
- Patent Title: Over voltage tolerant circuit
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Application No.: US14871734Application Date: 2015-09-30
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Publication No.: US10090838B2Publication Date: 2018-10-02
- Inventor: Chao Yang , Matthew Powell
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H03K19/0185
- IPC: H03K19/0185

Abstract:
An apparatus includes an integrated circuit, which includes a processor core, a plurality of input/output (I/O) circuits, and a plurality of over voltage tolerant (OVT) circuits. Each I/O circuit is associated with an I/O pad and is associated with an OVT circuit of the plurality of OVT circuits. At least one of the OVT circuits includes a passive circuit, which is adapted to receive a pad voltage from the associated I/O pad; receive a supply voltage of the associated I/O circuit; and based on a relationship of the received pad voltage relative to the received supply voltage, selectively couple a gate of a transistor of the associated I/O circuit to the pad voltage to inhibit a leakage current.
Public/Granted literature
- US20170093388A1 OVER VOLTAGE TOLERANT CIRCUIT Public/Granted day:2017-03-30
Information query
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