A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET device to maximize a transconductance of the MOSFET device and setting a gate voltage Vg of the MOSFET device to tune as desired a random number statistical distribution of an output of the MOSFET device. The MOSFET device includes a gate structure with an oxide layer including at least one artificial trapping layer in which carrier traps are designed to occupy a predetermined distance from conduction and valance bands of material of the artificial trapping layer.