Invention Grant
- Patent Title: Method for fabricating self-aligned contact in a semiconductor device
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Application No.: US15479418Application Date: 2017-04-05
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Publication No.: US10096525B2Publication Date: 2018-10-09
- Inventor: Chen-Ming Lee , Fu-Kai Yang , Mei-Yun Wang , Kuo-Yi Chao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8238 ; H01L29/49 ; H01L29/417 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes a gate structure disposed over a substrate, and sidewall spacers disposed on both side walls of the gate structure. The sidewall spacers includes at least four spacer layers including first to fourth spacer layers stacked in this order from the gate structure.
Public/Granted literature
- US20170207135A1 METHOD FOR FABRICATING SELF-ALIGNED CONTACT IN A SEMICONDUCTOR DEVICE Public/Granted day:2017-07-20
Information query
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