Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15444130Application Date: 2017-02-27
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Publication No.: US10096569B2Publication Date: 2018-10-09
- Inventor: Ying-Ta Chiu , Shang-Kun Huang , Yong-Da Chiu , Jenn-Ming Song
- Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC. , NATIONAL CHUNG HSING UNIVERSITY
- Applicant Address: TW Kaohsiung TW Taichung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.,NATIONAL CHUNG HSING UNIVERSITY
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.,NATIONAL CHUNG HSING UNIVERSITY
- Current Assignee Address: TW Kaohsiung TW Taichung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.
Public/Granted literature
- US20180247913A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-08-30
Information query
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