Invention Grant
- Patent Title: Semiconductor device having barrier layer to prevent impurity diffusion
-
Application No.: US15651751Application Date: 2017-07-17
-
Publication No.: US10096672B2Publication Date: 2018-10-09
- Inventor: I-Chih Chen , Chih-Mu Huang , Fu-Tsun Tsai , Meng-Yi Wu , Yung-Fa Lee , Ying-Lang Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/02 ; H01L29/06 ; H01L29/78
Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.
Public/Granted literature
- US20170317164A1 SEMICONDUCTOR DEVICE HAVING BARRIER LAYER TO PREVENT IMPURITY DIFFUSION Public/Granted day:2017-11-02
Information query
IPC分类:
