Invention Grant
- Patent Title: Plasma processing device and operation method
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Application No.: US15165064Application Date: 2016-05-26
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Publication No.: US10103009B2Publication Date: 2018-10-16
- Inventor: Shigehiro Miura , Hitoshi Kato , Jun Sato , Takeshi Kobayashi , Masato Yonezawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2014-029179 20140219
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/52 ; C23C16/455 ; C23C16/458 ; C23C16/50

Abstract:
An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.
Public/Granted literature
- US20160268105A1 PLASMA PROCESSING DEVICE AND OPERATION METHOD Public/Granted day:2016-09-15
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