- 专利标题： Method and design of low sheet resistance MEOL resistors
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申请号： US14792847申请日： 2015-07-07
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公开(公告)号： US10103139B2公开(公告)日： 2018-10-16
- 发明人: Nui Chong , Jae-Gyung Ahn , Ping-Chin Yeh , Cheang-Whang Chang
- 申请人： Xilinx, Inc.
- 申请人地址： US CA San Jose
- 专利权人： XILINX, INC.
- 当前专利权人： XILINX, INC.
- 当前专利权人地址： US CA San Jose
- 代理商 Gerald Chan; Carleton Clauss
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L23/62 ; H01L27/07 ; H01L23/522 ; H01L27/06 ; H01L49/02 ; H01L21/283 ; H01L21/76 ; H01L27/02
摘要：
An integrated circuit structure includes: a semiconductor substrate; a shallow trench isolation (STI) region in the semiconductor substrate; one or more active devices formed on the semiconductor substrate; and a resistor array having a plurality of resistors disposed above the STI region; wherein the resistor array comprises a portion of one or more interconnect contact layers that are for interconnection to the one or more active devices.
公开/授权文献
- US20170012041A1 METHOD AND DESIGN OF LOW SHEET RESISTANCE MEOL RESISTORS 公开/授权日：2017-01-12
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