- 专利标题: Semiconductor device and critical dimension defining method thereof
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申请号: US15483019申请日: 2017-04-10
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公开(公告)号: US10103166B1公开(公告)日: 2018-10-16
- 发明人: Kuan-Cheng Liu , Yu-Lin Liu , Cheng-Wei Lin , Chin-Cheng Yang , Shou-Wei Huang
- 申请人: MACRONIX INTERNATIONAL CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: McClure, Qualey & Rodack, LLP
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L27/11582 ; H01L23/544 ; H01L23/528 ; H01L21/28 ; H01L21/768 ; H01L21/027 ; H01L21/311
摘要:
A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.
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