The present disclosure discloses a power semiconductor device and a method for manufacturing the same. The power semiconductor device comprises: a substrate, a channel layer, a barrier layer, a source electrode, a drain electrode, a gate electrode, and a junction termination structure located on the barrier layer. The power semiconductor device extends in a first direction from an edge of a side of the gate electrode close to the drain electrode to the drain electrode, the junction termination structure at least comprises a first region close to the gate electrode and a second region away from the gate electrode and the thickness of the first region is greater than that of the second region in a second direction perpendicular to the barrier layer. The junction termination structure can effectively improve the distribution of an electric field of the barrier layer and hence increase the breakdown voltage of the device.