发明授权
- 专利标题: Quantum dot light-emitting diode and light-emitting display device using the diode
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申请号: US15810688申请日: 2017-11-13
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公开(公告)号: US10103345B2公开(公告)日: 2018-10-16
- 发明人: Kyung-Jin Yoon , Na-Yeon Lee
- 申请人: LG Display Co., Ltd.
- 申请人地址: KR Seoul
- 专利权人: LG Display Co., Ltd.
- 当前专利权人: LG Display Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Morgan, Lewis & Bockius LLP
- 优先权: KR10-2016-0151989 20161115
- 主分类号: H01L29/08
- IPC分类号: H01L29/08 ; H01L51/50 ; H01L29/66 ; H01L33/06 ; B82Y40/00
摘要:
Provided are a quantum dot light-emitting diode including an interface control layer located between a luminous material layer using quantum dots as a luminous material and at least one charge transfer layer for supplying charges to the luminous material layer, and a quantum dot light-emitting display device including the same. Since the interface control layer is provided between the luminous material layer and the at least one charge transfer layer, the occurrence of an interface defect due to an interfacial energy mismatch between the luminous material layer and the at least one charge transfer layer may be prevented to obtain the luminous material layer including quantum dots with uniform morphology. Furthermore, since the interface control layer is used, oxygen or moisture may be prevented from permeating into the luminous material layer, thereby preventing degradation of the quantum dots used as a luminous material.
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