Invention Grant
- Patent Title: Method and apparatus for wafer outgassing control
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Application No.: US15267232Application Date: 2016-09-16
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Publication No.: US10115607B2Publication Date: 2018-10-30
- Inventor: Xinyu Bao , Chun Yan , Hua Chung , Schubert S. Chu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: B65B31/00
- IPC: B65B31/00 ; H01L21/67 ; H01L21/673 ; H01L21/677

Abstract:
Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.
Public/Granted literature
- US20180082874A1 METHOD AND APPARATUS FOR WAFER OUTGASSING CONTROL Public/Granted day:2018-03-22
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