Semiconductor devices are provided that use both silicon on insulator region and bulk region of a fully depleted silicon on insulator (FDSOI) device. For example, a semiconductor device includes a drain region that is disposed above a first type well and a first drain extension region that is disposed above the first type well and laterally spaced apart from the drain region. The semiconductor device further includes a second drain extension region that is disposed above the first type well and is laterally spaced apart from the drain region and the first drain extension region. The semiconductor device further includes a source region disposed above a second type well and laterally spaced apart from the second drain extension.