Invention Grant
- Patent Title: Lateral plasma/radical source
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Application No.: US15353315Application Date: 2016-11-16
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Publication No.: US10121655B2Publication Date: 2018-11-06
- Inventor: Anantha K. Subramani , Kaushal Gangakhedkar , Abhishek Chowdhury , John C. Forster , Nattaworn Nuntaworanuch , Kallol Bera , Philip A. Kraus , Farzad Houshmand
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/02 ; H01L21/285 ; C23C16/455 ; H01J37/32

Abstract:
Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.
Public/Granted literature
- US20170148626A1 Lateral Plasma/Radical Source Public/Granted day:2017-05-25
Information query
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