Invention Grant
- Patent Title: Method of manufacturing semiconductor devices with transistor cells and semiconductor device
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Application No.: US15457833Application Date: 2017-03-13
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Publication No.: US10121859B2Publication Date: 2018-11-06
- Inventor: Ravi Keshav Joshi , Johannes Baumgartl , Oliver Blank , Oliver Hellmund , Martin Poelzl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102016104968 20160317
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L21/78 ; H01L21/68 ; H01L21/683 ; B81B7/00 ; B81C1/00 ; H01L29/40 ; H01L29/78
Abstract:
First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.
Public/Granted literature
- US20170271446A1 Method of Manufacturing Semiconductor Devices with Transistor Cells and Semiconductor Device Public/Granted day:2017-09-21
Information query
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