Invention Grant
- Patent Title: Field effect transistor with narrow bandgap source and drain regions and method of fabrication
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Application No.: US15660574Application Date: 2017-07-26
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Publication No.: US10121897B2Publication Date: 2018-11-06
- Inventor: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/786 ; H01L29/267 ; H01L29/10 ; H01L29/20 ; H01L29/423 ; H01L29/51 ; H01L29/06 ; H01L29/08 ; H01L29/201 ; H01L29/207 ; H01L29/417 ; H01L29/45 ; H01L29/16
Abstract:
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
Public/Granted literature
- US20170323972A1 FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION Public/Granted day:2017-11-09
Information query
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