Invention Grant
- Patent Title: Method of patterning graphene holes and method of fabricating graphene transparent electrode by using pulse laser
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Application No.: US15065488Application Date: 2016-03-09
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Publication No.: US10124438B2Publication Date: 2018-11-13
- Inventor: Jeongyub Lee , Yunsung Woo , Changseung Lee , Eunhyoung Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0121033 20150827
- Main IPC: H05K3/02
- IPC: H05K3/02 ; B23K26/0622 ; B23K26/384 ; H05K3/18 ; B23K26/08 ; H01L31/18 ; H05K3/00 ; B23K26/386 ; B23K26/082 ; H05K3/14
Abstract:
A method of patterning holes includes placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof, generating a pulse laser from the laser system, and forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in motion.
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