- 专利标题： Resistive memory device and resistive memory system including a plurality of layers, and method of operating the system
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申请号： US14968016申请日： 2015-12-14
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公开(公告)号： US10127978B2公开(公告)日： 2018-11-13
- 发明人: Eun-chu Oh , Pil-sang Yoon , Jun-jin Kong , Hong-rak Son
- 申请人： Eun-chu Oh , Pil-sang Yoon , Jun-jin Kong , Hong-rak Son
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness Dickey & Pierce, P.L.C.
- 优先权： KR10-2014-0180491 20141215
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; H03M13/05 ; H03M13/27 ; G06F12/00 ; G11C8/06 ; G06F11/10
摘要：
A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.
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