- 专利标题： Systems and methods for a semiconductor structure having multiple semiconductor-device layers
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申请号： US14074932申请日： 2013-11-08
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公开(公告)号： US10128269B2公开(公告)日： 2018-11-13
- 发明人: Yi-Tang Lin , Chun-Hsiung Tsai , Clement Hsingjen Wann
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8234 ; H01L21/84 ; H01L27/12 ; H01L27/092 ; H01L21/8238 ; H01L21/762 ; H01L29/10 ; H01L29/165
摘要：
A method of fabricating a semiconductor structure having multiple semiconductor device layers is provided. The method comprises providing a bulk substrate and growing a first channel material on the bulk substrate wherein the lattice constant of the channel material is different from the lattice constant of the bulk substrate to introduce strain to the channel material. The method further comprises fabricating a first semiconductor device layer on the bulk substrate with the strained first channel material, fabricating a buffer layer comprising dielectric material with a blanket top surface above the first semiconductor layer, bonding to the blanket top surface a bottom surface of a second substrate comprising a buried oxide with second channel material above the buried oxide, and fabricating a second semiconductor device layer on the second substrate.
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